Agent-free, highly sensitive, and simply operated Ag+ sensor with molybdenum disulfide-based field effect transistor

Cuiyun Kou1, Haiguo Hu2, Ying Tang1

  • 1Center for Advanced Analytical Science, Guangzhou Key Laboratory of Sensing Materials & Devices, Guangdong Engineering Technology Research Center for Photoelectric Sensing Materials & Devices, Key Laboratory of Optoelectronic Materials and Sensors in Guangdong Provincial Universities, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, China.

Talanta
|November 8, 2024
PubMed

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