Related Experiment Video
Updated: Jun 8, 2025

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
Enhancing the Efficiency and Stability of Inverted Perovskite Solar Cells and Modules through Top Interface
Qiuju Liu1,2, Lei Ding3, Jianfei Fu1
1School of Materials Science and Engineering (MSE), NingboTech University, No. 1 South Qianhu Road, Ningbo, 315211, China.
Abstract:
The interface modification between perovskite and electron transport layer (ETL) plays a crucial role in achieving high performance inverted perovskite photovoltaics (i-PPVs). Herein, non-fullerene acceptors (NFAs), known as Y6-BO and Y7-BO, were utilized to modify the perovskite/ETL interface in i-PPVs. Non-polar solvent-soluble NFAs can effectively passivate surface defects without structural damage of the underlying perovskite films. Additionally, the improved phenyl-C61-butyric acid methyl ester (PCBM) ETL induced by NFAs modification significantly accelerates the electrons extraction. As a result, both Y6-BO and Y7-BO exhibit more effective interface modification effects compared to traditional PI molecules. The power conversion efficiency (PCE) of the inverted perovskite solar cell (i-PSC) modified with Y7-BO reaches 25.82 %. Moreover, the adoption of non-polar solvents and the superior semiconductor properties of Y7-BO molecules also enable perovskite solar modules (i-PSM) with effective areas of 50 cm2, 400 cm2, and 1160 cm2 to achieve record efficiencies of 23.05 %, 22.32 %, and 21.1 % (certified PCE), respectively, making them the best PCE reported in the literature. Importantly, enhanced interface mechanical strength between the perovskite and PCBM layer results in significantly improved environmental and operational stability of the cells. The cells modified with Y7-BO maintained 94.4 % of the initial efficiency after 1522 hours of maximum power point aging.
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

