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Updated: May 25, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Device Applications Enabled by Bandgap Engineering Through Quantum Dot Tuning: A Review
Ho Kyung Lee1,2, Taehyun Park3, Hocheon Yoo3,4
1Smart Materials Research Center for IoT, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea.
Abstract:
Quantum dots (QDs) are becoming essential materials for future scientific and real-world applications, owing to their interesting and distinct optical and electrical properties compared to their bulk-state counterparts. The ability to tune the bandgap of QDs based on size and composition-a key characteristic-opens up new possibilities for enhancing the performance of various optoelectronic devices. These advances could extend to cutting-edge applications such as ultrawide-band or dual-band photodetectors (PDs), optoelectronic logic gates, neuromorphic devices, and security functions. This paper revisits the recent progress in QD-embedded optoelectronic applications, focusing on bandgap tunability. The current limitations and challenges in advancing and realizing QD-based optoelectronic devices are also discussed.
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