Interfacial Proton Precompensation: Suppressing Deprotonation-Driven Lattice Collapse for Enhanced Efficiency and...

The chemical property of the buried interface plays a crucial role in improving the performance and stability of perovskite solar cells (PSCs). The SnO₂/perovskite interface prepared from SnO₂ alkaline hydrogel with high proton affinity triggers directional migration and irreversible reactions of protons, exacerbating the disintegration of perovskite crystal. In this study, we proposed proton precompensation strategy to suppress the deprotonation effect of the buried interface and improve the durability of the devices. By modulating the chemical environment and surface energy state of the buried interface, the domain-limiting and spontaneous compensation of protons in formamidinium (FA⁺) under coulomb force were achieved, thereby stabilizing the perovskite crystal structure. The stability of target perovskite films under UV illumination and heating at 85 °C was significantly enhanced. As a result, the devices can retain around 90 % of their initial power conversion efficiency (PCE) after 1000 h of continuous irradiation at the maximum power point (MPP). Moreover, due to the reduction of defect content at the buried interface and the improvement of conductivity and carrier mobility by the precompensation treatment, the interfacial energy loss and non-radiative recombination were substantially diminished. The target PSC devices exhibited much higher PCE of 25.55 % than the control devices (23.03 %).