Energy Band Alignment and Defect Synergistic Regulation Enable Air-Solution-Processed Kesterite Solar Cells With the...

The major challenge in preparing high-performance Cu₂ZnSn(S,Se)₄ solar cells is the large open circuit voltage deficit (V_OC-def). A new strategy utilizing the synergistic substitution of Ag and In dual cations has been proposed to simultaneously address the problems of undesirable interface band alignment and high-density detrimental bulk defects, obtaining decreased carrier recombination rate and increased minority carrier lifetime. The shorter In-S/Se bonds move the CBM higher by generating stronger repulsive force than the Sn-S/Se bonds, thus adjusting the interface band alignment. Ag substitution can effectively suppress Cu─Zn disorder, while Ag, In dual substitution can further passivate Sn-related defects and solve the issue of low carrier concentration in Ag single-substituted samples. Besides, the superior carrier property of In-Se materials significantly enhanced the device carrier lifetime and minority carrier diffusion length. The state-of-the-art air-solution-processed CZTSSe device without any addition treatment with 14.33% efficiency and 580 mV V_OC is obtained, possessing the lowest V_OC-def value currently available in the CZTSSe field (V_OC/V_OC ^SQ = 64.7%). This work emphasizes the synergistic modulation of band alignment, defect level, grain growth, and carrier transportation by dual cation substitution, which paves a convenient and effective way to realize high-performance solar cells and photovoltaic devices.