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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Memristor Array Based on Wafer-Scale 2D HfS2 for Dual-Mode Physically Unclonable Functions.

Haofei Zheng1,2, Lingqi Li1, Yu-Chieh Chien1

  • 1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore.

ACS Applied Materials & Interfaces
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Summary

This study introduces a novel memristive device using 2D hafnium disulfide for enhanced physically unclonable functions (PUFs). The device offers improved security and reliability with dual operating modes, overcoming limitations of conventional silicon-based PUFs.

Keywords:
dual modeentropy sourcememristorsphysically unclonable functionswafer-scale HfS2

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Conventional silicon-based physically unclonable functions (PUFs) rely on fabrication variations but suffer from limited entropy and noise susceptibility.
  • Existing PUF technologies require enhancement in terms of entropy sources and operational reliability for secure applications.

Purpose of the Study:

  • To develop a novel memristive device for physically unclonable functions (PUFs) utilizing two-dimensional (2D) hafnium disulfide (HfS2).
  • To integrate dual operating modes (reconfigurable/secure and ultrareliable) within a single PUF circuit module.
  • To leverage enhanced entropy sources from polycrystalline HfS2 for improved PUF performance.

Main Methods:

  • Fabrication of wafer-scale (2-in.) 2D HfS2 thin films using molecular beam epitaxy (MBE).
  • Characterization of polycrystalline HfS2 for lattice defects and their impact on conductive filament formation.
  • Integration of a dual-mode PUF design with distinct operating characteristics.
  • Evaluation of PUF performance metrics including entropy, normalized Hamming distance, and correlation coefficient.
  • Application of a predictive Fourier regression model to assess unpredictability.

Main Results:

  • The polycrystalline HfS2 thin film provides enhanced entropy sources, including lattice defects, enabling random conductive filament formation and significant device-to-device (D2D) variations.
  • The proposed dual-mode PUF design achieved near-ideal performance metrics: Entropy (~1.0), normalized Hamming distance (~0.5), and correlation coefficient (~0.0) for both modes.
  • A predictive Fourier regression model confirmed the unpredictable nature of the dual-mode PUF, showing an average prediction accuracy of approximately 50%.

Conclusions:

  • The memristive HfS2 device offers a promising platform for next-generation physically unclonable functions (PUFs) with enhanced security and reliability.
  • The dual-mode operation provides flexibility for different application requirements, addressing limitations of conventional PUFs.
  • The inherent material properties of polycrystalline HfS2 contribute to robust and unpredictable PUF responses.