Low-threshold green lasing in heterogeneously integrated InGaN-based micro-rings covered by distributed Bragg reflectors on Si (100)

In this work, combining a series of wafer bonding, laser lift-off and chemical mechanical polishing processes, submicron-thick wafer-scale GaN-based thin-film epilayers are successfully transferred on Si (100), which provides a heterogeneous platform for fabricating microcavities for nitride-based integrated photonics. Low-threshold lasing via optical pumping from these transferred dry-etched green micro-ring cavities on Si is demonstrated by covering the whole micro-rings with dielectric distributed Bragg reflectors (DBRs), which greatly reduces the lasing threshold upon a better optical confinement at the ring rim. A high quality-factor of ∼3800 can be observed from the micro-rings beyond the lasing threshold under pulsed excitation conditions. Furthermore, room-temperature continuous-wave (CW) lasing at a wavelength of 521.7 nm with an ultralow threshold of 0.35 kW/cm² is achieved. Our results suggest the use of a burying DBR layer notably improves the WGM microcavity confinement, providing insights for the design of low-threshold micro-lasers and low-loss waveguides for potential integrated photonic applications in the visible light range on the Si platform.