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    This study introduces an improved black-box calibration for scattering-type scanning near-field optical microscopy (s-SNOM). The method accurately extracts material properties by accounting for probe tapping and background noise.

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    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Nanotechnology

    Background:

    • Scattering-type scanning near-field optical microscopy (s-SNOM) offers high sensitivity for analyzing nanoscale material properties.
    • Extracting complex permittivity from s-SNOM data is challenging due to complex probe-sample interactions, often requiring computationally intensive inverse problems.
    • Existing black-box calibration methods are typically suited for static systems, not dynamic s-SNOM setups.

    Purpose of the Study:

    • To develop an advanced black-box calibration technique for s-SNOM.
    • To address the limitations of existing methods in dynamic s-SNOM environments.
    • To enable more accurate quantitative analysis of material permittivity.

    Main Methods:

    • Proposed an improved black-box calibration method for s-SNOM.
    • Incorporated the effects of probe tapping and its harmonics into the calibration model.
    • Accounted for the far-field background signal in the calibration process.
    • Validated the method using mid-infrared s-SNOM spectroscopy on silicon microstructures.

    Main Results:

    • Successfully extracted complex permittivity from s-SNOM measurements.
    • Demonstrated the method's effectiveness on silicon microstructures with varying doping levels.
    • The improved calibration accurately accounts for dynamic effects like probe tapping.

    Conclusions:

    • The developed black-box calibration method enhances the quantitative accuracy of s-SNOM.
    • This technique overcomes limitations of static calibration methods in dynamic s-SNOM measurements.
    • Enables more reliable characterization of material permittivity at the nanoscale.