Graphene Oxide-Doped Indium Oxide Buffer Film Sandwiched between Titanium Oxide Layers for the Development of...

Over the past decade, metal oxide semiconductors have attracted considerable attention because of their transparency, high intrinsic charge carrier mobility, and charge carrier density. Metal oxide semiconductors also provide a promising route to develop resistive memory devices because of the tunability of their conductivity via the removal of oxygen ions, forming oxygen vacancies that can act as electron donors. Here, this paper reports the fabrication of a resistive random-access memory (ReRAM) device with TiO₂ and TiO_2- layers and introduces a solution-processed In₂O₃-graphene oxide (GO) buffer layer from a water-based precursor solution to tune the switching characteristics. The devices were compared with a ReRAM device with no buffer layer, and the device composition was optimized by tuning the GO concentration in the layers. The devices showed hysteresis under cyclically scanned bias between positive and negative voltages with clear switching between the low resistance state (LRS) and the high resistance state (HRS). The optimized device also showed a more than 3 orders of magnitude difference in resistance between the LRS and HRS and a stable current retention. The devices also showed photoresponsive behaviors. In the LRS, the current increased significantly under illumination, while in the HRS, the current deteriorated slowly when constantly illuminated. These results highlight the dual role of the GO flakes in the buffer layer by increasing the resistance in the HRS and providing a photoresponsive switching capability. The ReRAM device was connected to a TFT device, and its feasibility as a memory component in a digital circuit was successfully demonstrated. These results provide a new avenue for developing metal-oxide-based ReRAM devices with GO-containing active layers.