Ultrafast laser-enabled optoacoustic characterization of three-dimensional, nanoscopic interior features of...

The recent advances in micromanufacturing have been pushing boundaries of the new generation of semiconductor devices, which, in the meantime, brings new challenges in the material and structural characterization - a key step to ensure the device quality through the micromanufacturing process. An ultrafast laser-enable optoacoustic characterization methodology is developed, targeting in situ calibration and delineation of the three-dimensional (3-D), nanoscopic interior features of opaque semiconductor chips. With the guidance of ultrafast electron-phonon coupling effect and velocity-perturbated optical interference, a femtosecond-laser pump-probe set-up based on Sagnac interferometer is configured to generate and acquire picosecond ultrasonic bulk waves (P-UBWs) traversing the microchips. The interior features of the microchips shift the phase of acquired P-UBW signals, reflected in the perturbed probe laser beam. The phase shifts are calibrated to compute signal correlation of P-UBW signals between different acquiring positions, whereby to delineate the interior features in an intuitive manner. The approach is experimentally validated by characterizing nanoscopic, invisible interior aurum(Au)-gratings with periodically varied depths in typical microchips. Results highlight that the 3-D nanoscopic features of the microchips can be revealed with a microscopic and a nanoscopic spatial resolution, respectively along the transverse and depth directions of the chip, where the Au-gratings become "visible" with a depth variance of a few tens of nanometers only. This proposed approach has provided a fast, nondestructive approach to "see" through an opaque microchip with a nanoscopic resolution.