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Updated: Jun 7, 2025

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene
Published on: July 3, 2015
Intrinsic Magnetocrystalline Anisotropy Induced 3m-Symmetry Dependent Field-Free Switching in Epitaxial Garnet Films
Jintao Ke1,2, Dalin Zhang3, L Z Bi1,2
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, <a href="https://ror.org/05cvf7v30">Chinese Academy of Sciences</a>, Beijing 100190, China.
Abstract:
The electrical control of perpendicular magnetization without the need for external magnetic fields holds significant potential for next-generation spintronic devices. In this Letter, we have identified a 3m-symmetry dependent field-free switching phenomenon in (111)-oriented Tm_{3}Fe_{5}O_{12} single-crystal films capped with a platinum (Pt) layer. We demonstrate that this distinctive property arises due to the spontaneous breaking of mirror symmetry in magnetocrystalline anisotropy (MCA) for (111)-oriented magnetic films with a cubic structure, which results in a local out-of-plane MCA effective field with a 3m-symmetry dependence on the azimuth angle when the magnetization lies in the (111) plane. The observed field-free switching, facilitated by this MCA effective field, is validated by numerical simulations based both on macro-spin model and on micromagnetic theory. Our findings not only underscore the instrumental role of intrinsic MCA in enabling field-free magnetization switching but also enrich the fundamental understanding of the underlying switching dynamics.
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