Visualization of Anion Vacancy Defect Annihilation in CZTSe Solar Cells by Hydrogen-Assisted Selenization with In...

The traditional sulfur selenization process in Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cell fabrication often results in the creation of localized anion vacancies (V_S and V_Se). These vacancies are considered harmful defects as they can trap carriers generated by light, leading to reduced solar cell efficiency. Moreover, concrete evidence has been lacking on the extent of the impact caused by these anion vacancies. Our research introduces a novel approach: the hydrogen-assisted selenization (HAS) process, specifically designed to minimize localized anion vacancies in Cu₂ZnSnSe₄ (CZTSe) solar cells. Our investigation, utilizing current-voltage (I-V) and admittance spectroscopy measurements, provides clear insights. We observed notable improvements in carrier collection efficiency and a discernible reduction in defect states. Furthermore, there was a significant decrease in the activation energy required within the solar cell device, dropping from 184 to 145 meV. To delve deeper into the structural and compositional aspects, we employed synchrotron-based X-ray nanoprobes. Through nanoscale X-ray fluorescence and hard X-ray beam-induced current measurements, we can directly observe and document the relationship between the local compositional distribution and photocurrent activity in operando. These comprehensive results furnish strong evidence that mitigating anion vacancies in the CZTSe layer can substantially improve the power conversion efficiency of the CZTSe solar cells. This advancement not only sheds light on the critical role of anion vacancies in solar cell performance but also underscores the effectiveness of the HAS process in enhancing overall device efficiency.