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Nb impurity-bound excitons as quantum emitters in monolayer WS₂.

Leyi Loh^1,2, Yi Wei Ho^1,3, Fengyuan Xuan⁴

¹Department of Physics, National University of Singapore, Singapore, Singapore.

Nature Communications

|November 20, 2024

Summary

Researchers synthesized and studied Nb-doped monolayer WS2, revealing quantum emitters with narrow spectral lines. These single-dopant systems show potential for advanced single photon sources in 2D semiconductors.

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Area of Science:

Materials Science
Quantum Optics
Condensed Matter Physics

Background:

Point defects in solids can function as individual quantum systems.
Two-dimensional (2D) semiconductors offer potential for single photon sources.
Studying defects at the single-dopant level requires dilute concentrations.

Purpose of the Study:

To synthesize and characterize Nb-doped monolayer WS2 at the single-dopant level.
To investigate the optical properties of individual quantum emitters in this system.
To determine the nature of these emitters and their spectral characteristics.

Main Methods:

Synthesis of Nb-doped monolayer WS2 in the dilute limit.
Optical spectroscopy to study emission spectra at the single-dopant level.
Analysis of emission linewidths, spatial confinement, photon antibunching, and Zeeman splitting.

Main Results:

Individual Nb dopants in WS2 exhibit quantum emitter properties.
Observed narrow emission lines (<1 meV) and photon antibunching.
Emitters show consistent spectral range, unlike broader ensemble spectra in other van der Waals materials.
Zeeman splitting analysis attributes emitters to bound exciton complexes involving dark excitons and Nb-.

Conclusions:

Nb-doped monolayer WS2 hosts robust single-photon emitters.
These emitters are distinct from other quantum emitters in 2D materials.
The findings pave the way for developing novel single photon sources based on 2D semiconductors.