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Printed High-Entropy Prussian Blue Analogs for Advanced Non-Volatile Memristive Devices.

Yueyue He¹, Yin-Ying Ting^2,3,4, Hongrong Hu¹

¹Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Kaiserstr. 12, 76131, Karlsruhe, Germany.

Advanced Materials (Deerfield Beach, Fla.)

|November 20, 2024

Summary

This study introduces a novel non-volatile memristor using high-entropy Prussian blue analogs (HE-PBAs). The device utilizes ion shuttling for resistance switching, offering a low-power, high-performance alternative for electronic memory applications.

Keywords:

high‐entropy PBA memristors non‐volatile memory resistive switching mechanism

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Area of Science:

Materials Science
Nanotechnology
Solid-State Electronics

Background:

Non-volatile memristors are crucial for advanced electronic applications like memory and AI.
High-entropy Prussian blue analogs (HE-PBAs) offer unique properties for energy storage and electronic devices.

Purpose of the Study:

To develop and characterize a non-volatile, bipolar memristor utilizing HE-PBAs.
To investigate the ion-shuttling mechanism underlying the memristor's operation.

Main Methods:

Fabrication of Ag/HE-PBA/ITO memristor devices using inkjet printing and microplotting.
Systematic investigation of the conduction mechanism and resistance switching behavior.
Analysis of device performance metrics including operating voltage, power consumption, and resistance ratio.

Main Results:

The memristor exhibits non-volatile, bipolar switching driven by Na+ ion extraction/insertion, not filament formation.
Achieved low operating voltage (VSET = -0.26 V, VRESET = 0.36 V) and low power consumption (PSET = 26 µW, PRESET = 8.0 µW).
Demonstrated a high OFF/ON resistance ratio (R_OFF/R_ON) of 10^4, along with self-compliance and forming-free characteristics.

Conclusions:

High-entropy Prussian blue analogs are suitable for creating printed memristors with novel operating mechanisms.
The ion-shuttling mechanism offers a low-energy pathway for memristor operation.
This work highlights the potential of HE-PBAs in next-generation electronic memory and computing devices.