Related Experiment Video
Updated: Jun 7, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Topological Fermiology of gate-tunable Rashba electron gases
Jie Hu1, Ze-Zheng Fang1, Feng Sheng1
1School of Physics and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China.
Abstract:
By introducing first-order quantum phases as topological invariants, recent symmetry analysis-based theories have reinvigorated magnetic quantum oscillations as a versatile quantum probe for unfolding the Fermi surface topology along with the geometry information, i.e., topo-Fermiology. Here, we demonstrate the comprehensive topo-Fermiology of high-mobility Rashba two-dimensional electron gases with ultragate tunability of spin-orbit coupling parameter in few-layer black arsenic. The remarkable consistencies with the key theoretical predictions of period doubling in quantum oscillations, gate-tunable aperiodic beating patterns, and the symmetry-enforced Landau level crossing phenomena controlled by the competition between Rashba coupling and the Zeeman interaction, which ultimately manifests as all odd-filling factor integer quantum Hall effect with superb sensitivity to quantum phases, establish topo-Fermiology as an indispensable methodology for studying topological quantum matters.
Related Concept Videos
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

