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Updated: Jun 6, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Strong hole-photon coupling in planar Ge for probing charge degree and strongly correlated states

Franco De Palma1,2, Fabian Oppliger1,2, Wonjin Jang1,2

  • 1Hybrid Quantum Circuit Laboratory, Institute of Physics and Center for Quantum Science and Engineering, École Polytéchnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland.

Nature Communications
|November 23, 2024
PubMed

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