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Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography
Leifeng Zhang1, Muhammad Hamid Raza2, Rong Wu2,3
1CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, Toulouse Cedex, 31055, France.
Advanced Materials (Deerfield Beach, Fla.)
|November 25, 2024
Summary
This study quantifies trapped charges at interfaces in nanocapacitors using operando off-axis electron holography. The findings reveal a high density of trapped charges significantly influencing device electrical behavior.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Interfaces in heterostructures are critical for electronic device functionality.
- Charge trapping at interfaces affects memory, logic, and ferroelectric devices like ferroelectric tunnel junctions (FTJs).
- Direct measurement methods for electric-field induced charging phenomena in dielectric heterostructures are lacking.
Purpose of the Study:
- To develop and apply a method for quantifying trapped charges at dielectric/dielectric and metal/dielectric interfaces in nanocapacitors.
- To investigate the influence of trapped charges on the electric field distribution within these devices.
- To establish the relationship between trapped charges and applied bias.
Main Methods:
- Operando off-axis electron holography was employed to map electrostatic potential at sub-nanometer resolution.
- Bias was applied to HfO2- and Al2O3-based nanocapacitors during measurements.
- Numerical simulations were used in conjunction with experimental data.
Main Results:
- A high density of trapped charges was observed at both dielectric/dielectric and metal/dielectric interfaces.
- These trapped charges were found to significantly influence the electric field distribution within the nanocapacitors.
- A linear relationship between trapped charges and applied bias was demonstrated for the first time.
Conclusions:
- Operando off-axis electron holography is a powerful technique for quantifying interface charges in electronic devices.
- Interface charge trapping plays a crucial role in the local electrical behavior of HfO2- and Al2O3-based nanocapacitors.
- Understanding interface charge dynamics is essential for advancing memory, logic, and ferroelectric device technologies.
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