High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)₂PbI₄/GaN Heterojunction

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Wide-bandgap semiconductors like Gallium Nitride (GaN) are crucial for ultraviolet (UV) detection.
• Integrating materials with different spectral sensitivities into heterojunctions is key for next-generation photodetectors.
• Perovskite materials offer unique optoelectronic properties suitable for device innovation.

Purpose of the Study:

• To fabricate a high-performance, self-powered, dual-mode ultraviolet photodetector.
• To investigate the properties of a (PEA)2PbI4/GaN heterojunction for UV detection.
• To demonstrate the potential of perovskite-wide bandgap semiconductor heterojunctions in optoelectronics.

Main Methods:

• Fabrication of a (PEA)2PbI4/GaN heterojunction photodetector using spin coating.
• Characterization of the photodetector's performance under UV illumination (365 nm).
• Evaluation of device sensitivity, detectivity, and response times under varying bias conditions.

Main Results:

• The dual-mode photodetector achieved high UV sensitivity under both positive and negative bias.
• Achieved responsivity of 1.39 A/W and detectivity of 8.71 × 10^10 Jones.
• Demonstrated self-powered operation due to the built-in electric field, with rapid rise (46.9 ms) and decay (55.9 ms) times.

Conclusions:

• The (PEA)2PbI4/GaN heterojunction is a promising material system for high-performance self-powered UV photodetectors.
• The device's dual-mode operation and excellent performance metrics highlight its potential for advanced optoelectronic applications.
• Findings provide valuable insights for developing novel perovskite and wide-bandgap semiconductor heterojunction devices.