Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

218
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
218
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

4.6K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.6K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.1K
Charging Conductors By Induction01:15

Charging Conductors By Induction

7.6K
The Earth is a good conductor of electricity, and it is so big that it can be considered an infinite source or sink of charges. It can easily exchange charges with any matter.
Generally, conductors like metals do not allow any excess charge to be present on them. Any excess charge added to metals easily flows away, for example, when a metal is placed on the Earth. This process is called earthing.
However, conductors can be charged by a process called induction. For example, consider charging a...
7.6K
MOS Capacitor01:25

MOS Capacitor

707
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
707
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

294
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
294

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Fabrication of a quaternary ammonium chitosan/pomelo peel extract nanocarrier system for tea polyphenol delivery: characterization, stability, digestibility, and release properties.

Food chemistry: X·2026
Same author

A molecular timescale for evolution of cobamide biosynthesis.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Complementary nonlinear optics for polarimetric computing in tellurium.

Nature communications·2026
Same author

Morphology-Programmable Orthogonally Aligned Silicon Nanowire Arrays for Integrated Strain-Temperature Bimodal Sensing.

Nano letters·2026
Same author

Isostructural Doping in Ultrathin Molecular Crystals for Temperature-Immune and Ultralow-Power Organic Electronics.

ACS nano·2026
Same author

Screening Crystallographic Planes on Sapphire for Single-Crystal MoS<sub>2</sub> Epitaxy.

ACS nano·2026
Same journal

Accurate Density Functional Theory Forces for Charged Noncovalent Complexes.

The journal of physical chemistry letters·2026
Same journal

Dopant-Centered versus Intersite Synergistic Mechanisms in H<sub>2</sub> Dissociation on Single-Atom Alloys.

The journal of physical chemistry letters·2026
Same journal

Post-Translational Modification as an Allosteric Switch in Hsp90: How Dual Phosphorylation Locks Chaperone Complexes into Hyperstabilized States.

The journal of physical chemistry letters·2026
Same journal

LHCSR1 Functions as a Dimmer Switch for Light Harvesting.

The journal of physical chemistry letters·2026
Same journal

Sparse Linear Surrogates Match Neural Network Potentials on the SPICE Biomolecular Benchmark with Three Orders of Magnitude Smaller Training Sets.

The journal of physical chemistry letters·2026
Same journal

Solid-State NMR Quantification of Brønsted-Lewis Acid Site Cooperativity in Zeolites for Glucose Conversion.

The journal of physical chemistry letters·2026
See all related articles

Related Experiment Video

Updated: Jun 6, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.3K

Interface Charge Engineering in Ferroelectric Neuristors for a Complete Machine Vision System.

Qinyong Dai1, Mengjiao Pei1, Jianhang Guo1

  • 1National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.

The Journal of Physical Chemistry Letters
|November 26, 2024
PubMed
Summary
This summary is machine-generated.

Researchers developed novel ferroelectric neuristors that mimic the human visual system for advanced machine vision systems (MVSs). These devices offer light-adaptive sensing and all-optical weight updates, achieving 93% accuracy in digit recognition under challenging light conditions.

More Related Videos

Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces
07:51

Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces

Published on: February 24, 2012

24.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

Related Experiment Videos

Last Updated: Jun 6, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.3K
Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces
07:51

Voltage Biasing, Cyclic Voltammetry, & Electrical Impedance Spectroscopy for Neural Interfaces

Published on: February 24, 2012

24.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

Area of Science:

  • Materials Science
  • Neuroscience
  • Computer Engineering

Background:

  • Artificial intelligence advancements necessitate hardware mimicking biological visual systems.
  • Current machine vision systems (MVSs) have limitations in replicating retinal functions and all-optical weight updates.

Purpose of the Study:

  • To engineer ferroelectric neuristors capable of mimicking human visual system functions.
  • To enable dynamic modulation of optoelectronic characteristics for a complete MVS.
  • To achieve all-optical weight updates for MVS processors.

Main Methods:

  • Interface charge engineering by varying PMMA charge trapping layer thickness.
  • Fabrication of ferroelectric neuristors.
  • Characterization of device optoelectronic properties and performance in MVS tasks.

Main Results:

  • Ferroelectric polarization of neuristors is controllable via light or electrical pulses.
  • Devices exhibit autonomous light adaptation (thick PMMA) or bidirectional photoresponse (thin PMMA).
  • Moderate thickness PMMA devices show linear conductance updates via all-optical pulses.
  • An MVS utilizing these neuristors achieved 93% accuracy in handwritten digit recognition under extreme lighting.

Conclusions:

  • The developed ferroelectric neuristors offer a viable strategy for creating energy-efficient and highly integrated intelligent MVSs.
  • This approach enables dynamic modulation and all-optical control, overcoming limitations of current MVS technology.