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Superconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers
Kaixuan Fan1,2,3, Ze Hua4, Siyao Gu1,2,3
1Center for Joint Quantum Studies and Department of Physics, School of Science, Tianjin University, Tianjin 300354, China.
Researchers discovered superconductivity in palladium (Pd) and bismuth selenide (Bi2Se3) bilayers. This interfacial superconductivity arises from Pd diffusion into Bi2Se3, forming a superconducting PdBiSe layer, crucial for topological quantum devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Computing
Background:
- Interfacial phenomena in topological insulators are key for advanced quantum devices.
- Topological insulators like bismuth selenide (Bi2Se3) offer unique electronic properties.
Purpose of the Study:
- To investigate superconductivity at metal/topological insulator interfaces.
- To develop methods for integrating superconductivity into topological materials.
Main Methods:
- Fabrication of palladium (Pd)/Bi2Se3 bilayers using sputtering.
- Transmission electron microscopy (TEM) for interfacial analysis.
Main Results:
- Observed robust interfacial superconductivity in Pd/Bi2Se3 bilayers.
- Identified Pd diffusion into Bi2Se3 as the source of superconductivity.
- Formation of a PdBiSe superconducting layer with a transition temperature of 1.5 K.
Conclusions:
- Pd diffusion and reaction with Bi2Se3 successfully induce superconductivity.
- This work establishes a pathway for creating Bi2Se3-based topological superconducting devices.
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