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Chalcopyrite CuFeS2: Solid-State Synthesis and Thermoelectric Properties.

Jin-Sol Kim1, Il-Ho Kim1

  • 1Department of Materials Science and Engineering, College of Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea.

Materials (Basel, Switzerland)
|November 27, 2024
PubMed
Summary

This study optimized chalcopyrite CuFeS2 synthesis using mechanical alloying and hot pressing. The best thermoelectric properties were achieved at 773 K, showing potential for mid-range applications.

Keywords:
chalcopyritesolid-state synthesisthermoelectric

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Area of Science:

  • Materials Science
  • Solid State Chemistry
  • Thermoelectrics

Background:

  • Chalcopyrite CuFeS2 is a promising material for thermoelectric applications.
  • Optimizing synthesis conditions is crucial for enhancing thermoelectric performance.

Purpose of the Study:

  • To investigate optimal conditions for synthesizing pure chalcopyrite CuFeS2.
  • To evaluate the thermoelectric properties of CuFeS2 synthesized via mechanical alloying and hot pressing.

Main Methods:

  • Mechanical alloying (MA) at 350 rpm for 6-24 h under Ar atmosphere.
  • Hot pressing (HP) at 723-823 K, 70 MPa for 2 h in vacuum.
  • Differential scanning calorimetry (DSC) and X-ray diffraction (XRD) for phase analysis.
  • Thermoelectric property evaluation as a function of HP temperature.

Main Results:

  • Pure tetragonal chalcopyrite phase synthesized, with minor talnakhite at 823 K.
  • Electrical conductivity increased with HP temperature due to densification.
  • Seebeck coefficient and thermal conductivity decreased with increasing HP temperature.
  • Optimal thermoelectric performance achieved for sample hot-pressed at 773 K.

Conclusions:

  • The combination of MA and HP provides a viable route for CuFeS2 synthesis.
  • Hot pressing temperature significantly influences phase purity and thermoelectric properties.
  • The sample hot-pressed at 773 K exhibited the highest power factor (0.81 mWm-1K-1) and ZT (0.32), indicating potential for mid-range thermoelectric devices.