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Efficient curvilinear optical proximity correction using non-uniform B-spline curves.

He Yang, Yanqiu Li, Miao Yuan

|November 27, 2024

Summary

This study introduces an efficient curvilinear optical proximity correction (OPC) method using non-uniform B-spline curves and knot removal. The new approach significantly improves optimization speed and reduces mask data size for advanced lithography.

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Area of Science:

Computational lithography
Semiconductor manufacturing
Mask design

Background:

Curvilinear masks offer superior lithography imaging fidelity compared to Manhattan masks.
Optical proximity correction (OPC) is crucial for designing mask contours in computational lithography.
Existing curvilinear OPC methods are computationally intensive and generate redundant data.

Purpose of the Study:

To develop a more efficient curvilinear OPC method.
To reduce computational complexity and mask file size.
To address data redundancy in curvilinear mask design.

Main Methods:

Utilizing non-uniform B-spline curves to represent curvilinear mask structures.
Implementing a knot removal process to eliminate redundant data.
Applying these techniques within the curvilinear OPC framework.

Main Results:

Demonstrated superior optimization efficiency compared to existing methods.
Achieved significant data reduction (DRON rate).
Verified the effectiveness of non-uniform B-spline curves and knot removal in simulations.

Conclusions:

The proposed curvilinear OPC method enhances computational efficiency.
Knot removal effectively tackles data redundancy in curvilinear mask design.
This approach offers a promising solution for advanced semiconductor lithography.