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Author Correction: Vertically oriented low-dimensional perovskites for high-efficiency wide band gap perovskite solar

Andrea Zanetta1, Valentina Larini1, Vikram2

  • 1Università Degli Studi Di Pavia - Pavia (Italy), Department of Chemistry & INSTM, Via T. Taramelli 14, Pavia, Italy.

Nature Communications
|November 29, 2024
PubMed
Abstract

No abstract available in PubMed .

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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