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Updated: Jun 6, 2025
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
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Overestimation of Operational Stability in Polymer-Based Organic Field-Effect Transistors Caused by Contact
Kenji Sakamoto1, Takeshi Yasuda2, Takeo Minari1
1Research Center for Macromolecules and Biomaterials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
ACS Applied Materials & Interfaces
|December 1, 2024
Summary
Contact resistance significantly impacts organic field-effect transistor (OFET) stability assessments. Correcting for contact resistance (Rc) reveals true operational stability, especially in short-channel devices, preventing overestimation of performance.
Area of Science:
- Materials Science
- Electronics
- Semiconductors
Background:
- Organic field-effect transistors (OFETs) are crucial for flexible electronics.
- Understanding bias-stress effects is vital for OFET operational stability.
Purpose of the Study:
- To investigate the impact of contact resistance (Rc) on bias-stress effects in polymer-based OFETs.
- To evaluate the channel length dependence of OFET operational stability.
Main Methods:
- Fabrication of bottom-gate, top-contact polymer OFETs with varying channel lengths (50-500 μm).
- Repeated bias-stress application and transfer characteristics measurements.
- Analysis of threshold voltage (Vth) and mobility (μ) shifts with and without Rc correction.
Main Results:
- OFETs showed nonlinear transfer characteristics and degradation under bias stress.
- Apparent channel length dependence of Vth shift and μ reduction was observed without Rc correction.
- Correction for Rc eliminated the channel length dependence, revealing overestimated stability in short-channel devices.
Conclusions:
- Contact resistance significantly influences the apparent operational stability of OFETs.
- Short-channel OFET stability is overestimated without Rc correction, particularly in high-mobility devices.
- Attention to Rc is crucial for accurate OFET research and development, especially concerning active layers and interfaces.
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