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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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MOSFET: Depletion Mode01:20

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Metal-Semiconductor Junctions01:24

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Related Experiment Video

Updated: Jun 5, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Gap solitons on an integrated CMOS chip.

Ju Won Choi1, Byoung-Uk Sohn1, Ezgi Sahin1

  • 1Photonics Devices and System Group, Singapore University of Technology and Design, 8 Somapah Rd, Singapore 487372, Singapore.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
Summary
This summary is machine-generated.

Researchers demonstrate gap solitons on photonic chips, observing slow light and pulse compression. This breakthrough enables on-chip optical buffering, delay lines, and storage using nonlinear Bragg gratings.

Keywords:
Bragg gratingCMOSgap solitonultra-silicon-rich nitride

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Area of Science:

  • Photonics
  • Nonlinear Optics
  • Materials Science

Background:

  • Nonlinear propagation in periodic media is well-studied, demonstrating phenomena like temporal compression and slow light.
  • Gap solitons, observed in optical fibers, have been difficult to achieve in photonic chip platforms.

Purpose of the Study:

  • To investigate nonlinear pulse propagation within a chip-based nonlinear Bragg grating at frequencies inside the stopband.
  • To observe and confirm the presence of gap solitons on a photonic chip.

Main Methods:

  • Experiments utilized an on-chip ultra-silicon-rich nitride (USRN) Bragg grating.
  • Picosecond timescale pulses were employed to study nonlinear propagation.
  • Nonlinear coupled mode equations were used for theoretical validation.

Main Results:

  • Clear signatures of gap soliton propagation were observed, including slow light, intensity-dependent transmission, and temporal delay.
  • Slow light group velocity was reduced to 35%-40% of the speed of light in vacuum.
  • Significant temporal compression (up to 2.7x) and a temporal delay change of 7 ps were recorded.

Conclusions:

  • This demonstration confirms gap soliton propagation on-chip, a significant advancement for photonic devices.
  • The findings open avenues for on-chip platforms for studying gap solitons.
  • Potential applications include all-optical buffers, delay lines, and optical storage.