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Pattern-tunable synthetic gauge fields in topological photonic graphene
Zhen-Ting Huang1, Kuo-Bin Hong1, Ray-Kuang Lee2,3
1Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30050, Taiwan, ROC.
Nanophotonics (Berlin, Germany)
|December 5, 2024
Summary
We demonstrate a novel method using strain-engineering to create photonic topological insulators with high-quality edge states. This technique offers tunable properties for advanced photonic applications.
Area of Science:
- Photonics
- Condensed Matter Physics
- Materials Science
Background:
- Photonic topological insulators (PTIs) offer robust edge states for light manipulation.
- Controlling topological properties in PTIs often requires complex fabrication or external fields.
Purpose of the Study:
- To propose a straightforward and effective method for designing PTIs with high-quality edge states using strain-engineering.
- To investigate the tunability and localization of these strain-induced topological edge states.
Main Methods:
- Pattern-tunable strain-engineering to create chiral synthetic gauge fields in two domains.
- Analysis of Landau levels and topological numbers in strained photonic structures.
- Characterization of edge state properties, including quality factors, confinement, and localization.
Main Results:
- Achieved PTIs supporting high quality factor edge states through continuous strain modulation.
- Demonstrated robust time-reversal and spin-momentum-locked edge states at domain boundaries.
- Showcased remarkable field confinement and tunability, with strain controlling edge state localization.
Conclusions:
- The two-domain strain-engineering design stabilizes topological edge states.
- The approach offers large potential bandwidth and scalability for photonic applications.
- Enables applications in tunable microcavities, lasers, and quantum information processing.
Keywords:
chiral strain-engineeringstrong localizationsynthetic gauge fieldstopological edge statetunable capability
