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High-efficiency SOI-based metalenses at telecommunication wavelengths
Taesu Ryu1, Moohyuk Kim2, Yongsop Hwang3,4
1Department of Optical Engineering, Kongju National University, Cheonan, 31080, Republic of Korea.
Nanophotonics (Berlin, Germany)
|December 5, 2024
Summary
We developed high-efficiency metalenses using silicon-on-insulator (SOI) technology for telecommunication wavelengths. These novel metalenses offer strong focusing and a long depth of field, enabling advanced silicon photonic integrated circuits.
Area of Science:
- Photonics and Optical Engineering
- Materials Science
Background:
- Metalenses offer miniaturization potential over traditional optics.
- Silicon-on-insulator (SOI) platforms are crucial for integrated photonics.
Purpose of the Study:
- To demonstrate high-efficiency metalenses integrable with standard silicon photonic chips.
- To enhance metalens focusing capabilities using a novel material combination.
Main Methods:
- Numerical investigation of a metasurface with a silicon (Si) and ma-N disk array.
- Experimental demonstration of metalenses with a thick ma-N layer on SOI.
Main Results:
- A Si/ma-N metalens focused light six times stronger than a Si-only metalens.
- Achieved a short focal length of 10 μm and a spot diameter of ~2.5 μm at 1530 nm.
- Demonstrated strong focusing and a long depth of field at telecommunication wavelengths.
Conclusions:
- The developed metalenses are highly efficient and integrable with silicon photonic integrated circuits.
- This technology enables miniaturized, high-performance optical components for ultrasensitive sensors.
