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CMOS-compatible, AlScN-based integrated electro-optic phase shifter.

Valerie Yoshioka1, Jicheng Jin1, Haiqi Zhou1

  • 1University of Pennsylvania, Philadelphia, PA 19104, USA.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
Summary
This summary is machine-generated.

Aluminum Scandium Nitride (AlScN) shows potential for scalable integrated photonics and electro-optic modulation. While demonstrating phase shifting, the electro-optic response was lower than anticipated, requiring further research for optimization.

Keywords:
electro-optic phase shifterintegrated photonicsphotonic materials

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Area of Science:

  • Integrated photonics
  • Materials science
  • Electro-optics

Background:

  • Scalability challenges limit commercial production of integrated photonic devices.
  • Aluminum Scandium Nitride (AlScN) is an emerging material with potential for photonic applications.
  • AlScN offers CMOS-compatibility and enhanced second-order optical nonlinearity compared to AlN.

Purpose of the Study:

  • To investigate the electro-optic effect in AlScN for phase shifting and modulation.
  • To assess the feasibility of AlScN for large-scale integrated photonic modulator production.
  • To measure the electro-optic performance of AlScN-based phase shifters.

Main Methods:

  • Fabrication and characterization of AlScN-based phase shifters.
  • Measurement of the electro-optic effect utilizing the TM0 mode.
  • Determination of the r33 electro-optic coefficient and V_L (half-wave voltage-length product).

Main Results:

  • Demonstrated electro-optic phase shifting in Al0.80Sc0.20N.
  • Achieved a V_L of approximately 750 V cm.
  • Observed an electro-optic response smaller than theoretically expected.

Conclusions:

  • AlScN exhibits electro-optic properties suitable for phase shifting, but the response needs improvement.
  • Potential causes for the reduced electro-optic response were discussed.
  • Further research is needed to optimize AlScN for efficient integrated photonic modulators.