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Carrier Generation and Recombination01:22

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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Second harmonic generation in monolithic gallium phosphide metasurfaces.

Muyi Yang1,2,3, Maximilian A Weissflog2,3, Zlata Fedorova1,2

  • 1Institute of Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena, Germany.

Nanophotonics (Berlin, Germany)
|December 5, 2024
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Summary
This summary is machine-generated.

Researchers developed monolithic gallium phosphide (GaP) metasurfaces for enhanced nonlinear nanophotonics. These structures offer a simple, accessible alternative to thin-film designs for applications like second harmonic generation (SHG).

Keywords:
gallium phosphidenanofabricationnonlinear metasurfacessecond harmonic generation

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Area of Science:

  • Nonlinear optics
  • Quantum nanophotonics
  • Materials science

Background:

  • Gallium phosphide (GaP) possesses a wide transparency range and high nonlinear susceptibility, ideal for nanophotonics.
  • Limited availability of single crystalline GaP thin films on low-index substrates hinders nonlinear dielectric metasurface fabrication.
  • Tailoring nonlinear responses requires specific crystal orientations, posing fabrication challenges.

Purpose of the Study:

  • To design and experimentally realize monolithic GaP metasurfaces for enhanced and tailored second harmonic generation (SHG).
  • To provide a simple and broadly accessible alternative to existing thin-film metasurface designs.
  • To investigate the SHG performance and emission characteristics of monolithic GaP metasurfaces.

Main Methods:

  • Fabrication of monolithic GaP metasurfaces from bulk (110) GaP wafers.
  • Utilized electron-beam lithography and optimized inductively coupled plasma etching without a hard mask.
  • Characterized nonlinear performance using SHG measurements and nonlinear back-focal plane imaging.

Main Results:

  • Achieved high near-infrared-to-visible (NIR-to-visible) conversion efficiency up to 10-5, comparable to III-V semiconductor thin-film metasurfaces.
  • Demonstrated tailored SHG through control of crystal orientation and metasurface design.
  • Observed significant emission of second harmonic light into the zeroth diffraction order along the optical axis.

Conclusions:

  • Monolithic GaP metasurfaces present a viable and accessible alternative to thin-film designs for nonlinear nanophotonics.
  • The developed fabrication process enables efficient and tailorable nonlinear optical responses.
  • These findings open new avenues for GaP-based devices in quantum and nonlinear optical applications.