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Electrically tunable metasurface by using InAs in a metal-insulator-metal configuration
Junghyun Park1, Seong Jun Kim2, Volker J Sorger3
1Samsung Advanced Institute of Technology, Samsungro 130, Youngtong-gu, Suwon 16678, Republic of Korea.
Nanophotonics (Berlin, Germany)
|December 5, 2024
Summary
This study introduces an electrically tunable metasurface for precise optical control at the subwavelength scale. The device enables dynamic modulation of light
Area of Science:
- Metasurfaces
- Mid-infrared optics
- Nanophotonics
Background:
- Modulating optical properties at subwavelength scales is vital for advanced optical devices.
- Existing tunable optical components often lack element-wise control or operate outside the mid-infrared spectrum.
Purpose of the Study:
- To present an electrically tunable metasurface for element-wise control of optical properties.
- To demonstrate dynamic modulation of amplitude and phase in the mid-infrared regime.
Main Methods:
- Fabrication of a metal-insulator-metal device using an n-doped Indium Arsenide (InAs) layer.
- Electrical tuning of charge carrier concentration in the InAs layer via gate biases.
- Numerical simulations to investigate optical response.
Main Results:
- Achieved a reflectivity contrast of 44% with applied biases.
- Demonstrated a phase change of 236° at a wavelength of approximately 5 μm.
- Showcased wavefront shaping capabilities, including beam focusing and steering.
Conclusions:
- The proposed metasurface offers precise, element-wise control of optical properties in the mid-infrared.
- The device shows significant potential for applications in holographic displays, optical communications, and sensing.
