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Related Concept Videos

Metal-Semiconductor Junctions01:24

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Photonic topological Lifshitz interfaces.

Xianji Piao1, Jonghwa Shin2, Namkyoo Park1

  • 1Photonic Systems Laboratory, Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Korea.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
Summary
This summary is machine-generated.

We introduce a spatial analogy for the Lifshitz transition, revealing new insights into transverse-spin interface states. This topological perspective explains the conditions for exciting these states and their unique properties.

Keywords:
Abraham–Minkowski controversyLifshitz transitioninterface statestopologytransverse spinwavevector diagram

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Area of Science:

  • Condensed matter physics
  • Topological materials science

Background:

  • Wavevector diagrams intrinsically describe electronic and photonic transport.
  • Lifshitz transitions are topological transitions in wavevector diagrams crucial for abnormal transport phenomena like enhanced magnetoresistance and superconductivity.

Purpose of the Study:

  • To develop a spatial analogy of the Lifshitz transition for a topological perspective on transverse-spin interface states.
  • To establish the excitation conditions for transverse-spin interface states.

Main Methods:

  • Analysis of wavevector diagram topologies and gaps across a "Lifshitz interface".
  • Investigation of the relationship between dimensionality, gaps, and interface state properties.

Main Results:

  • Identified "Lifshitz interface" and wavevector diagram gaps as key excitation conditions for transverse-spin interface states.
  • Demonstrated distinct parity of transverse spins and power flows in these modes.
  • Observed Abraham-spin-momentum locking in interface states, linked to the gauge induced by the Lifshitz interface.

Conclusions:

  • The spatial analogy of the Lifshitz transition offers a comprehensive topological view of transverse-spin interface states.
  • These findings provide novel insights into the Abraham-Minkowski controversy.