Electrical control of Förster resonant energy transfer across single-layer graphene

In artificial structures of molecular or quantum dot emitters in contact with single-layer graphene (SLG) Förster-type resonant energy transfer (FRET) can occur unconditionally due to the gapless band structure of SLG. A significant breakthrough for applications, however, would be the electrical modulation of FRET between arbitrary FRET pairs, using the SLG to control this process and taking advantage of the particular band structure and the monatomic thickness of SLG, far below the typical Förster radius of a few nanometers. For a proof of concept, we have therefore designed a Sandwich device where the SLG was transferred onto holey Si₃N₄ membranes and organic molecules were deposited on either side of the SLG. The relative photoluminescence (PL) intensities of donor and acceptor molecules changed continuously and reversibly with the external bias voltage, and a variation of about 6% of FRET efficiency has been achieved. We ascribe the origin of the electrical modulation of FRET to important doping-dependent nonlocal optical effects in the near field of SLG in the visible range.