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Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs

Baokang Peng1, Yanxin Jiao1, Haotian Zhong1

  • 1School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.

Fundamental Research
|December 11, 2024
PubMed

Keywords:
Compact modelGate-all-around FETNanosheet FETNanowire FETQuantum mechanical confinementSub-band energy

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