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Robust Topological Interface States in a Lateral Magnetic-Topological Heterostructure.

Qun Niu1, Jie Yao2, Quanchao Song1

  • 1School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.

Small (Weinheim an Der Bergstrasse, Germany)
|December 12, 2024
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Summary
This summary is machine-generated.

Robust topological interface states were observed in lateral magnetic-topological heterostructures. These states are stable against various perturbations, paving the way for high-density non-dissipative devices.

Keywords:
Bi(110)CrTe2lateral heterostructurescanning tunneling microscopy/spectroscopy (STM/S)topological

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Achieving the Quantum Anomalous Hall effect requires magnetic order in 2D topological insulators.
  • Topological properties of 2D materials are fragile and difficult to maintain.
  • The existence of topological interface states (TISs) in magnetic-topological heterostructures remains largely unexplored.

Purpose of the Study:

  • To investigate the existence and robustness of TISs in a lateral heterostructure of CrTe2/Bi(110).
  • To explore the potential of lateral magnetic-topological heterostructures for practical applications.

Main Methods:

  • Fabrication of a lateral heterostructure using epitaxial growth of bilayer Bi on monolayer CrTe2.
  • Characterization using Scanning Tunneling Microscopy (STM) and non-contact Atomic Force Microscopy (AFM).
  • Spectroscopic analysis via scanning tunneling spectroscopy and dI/dV mapping.

Main Results:

  • Demonstrated a black phosphorus-like structure for bilayer Bi(110) with minimal atomic buckling.
  • Confirmed the presence of topologically induced one-dimensional in-gap states localized at the interface.
  • Showcased the robustness of TISs against disorder, defects, magnetic fields, and elevated temperatures (77 K).

Conclusions:

  • TISs in lateral magnetic-topological heterostructures exhibit remarkable robustness.
  • These findings are comparable to vertically stacked heterostructures.
  • This work offers a promising approach for developing planar, high-density non-dissipative devices.