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Robust Topological Interface States in a Lateral Magnetic-Topological Heterostructure
Qun Niu1, Jie Yao2, Quanchao Song1
1School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
Small (Weinheim an Der Bergstrasse, Germany)
|December 12, 2024
Summary
Robust topological interface states were observed in lateral magnetic-topological heterostructures. These states are stable against various perturbations, paving the way for high-density non-dissipative devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- Achieving the Quantum Anomalous Hall effect requires magnetic order in 2D topological insulators.
- Topological properties of 2D materials are fragile and difficult to maintain.
- The existence of topological interface states (TISs) in magnetic-topological heterostructures remains largely unexplored.
Purpose of the Study:
- To investigate the existence and robustness of TISs in a lateral heterostructure of CrTe2/Bi(110).
- To explore the potential of lateral magnetic-topological heterostructures for practical applications.
Main Methods:
- Fabrication of a lateral heterostructure using epitaxial growth of bilayer Bi on monolayer CrTe2.
- Characterization using Scanning Tunneling Microscopy (STM) and non-contact Atomic Force Microscopy (AFM).
- Spectroscopic analysis via scanning tunneling spectroscopy and dI/dV mapping.
Main Results:
- Demonstrated a black phosphorus-like structure for bilayer Bi(110) with minimal atomic buckling.
- Confirmed the presence of topologically induced one-dimensional in-gap states localized at the interface.
- Showcased the robustness of TISs against disorder, defects, magnetic fields, and elevated temperatures (77 K).
Conclusions:
- TISs in lateral magnetic-topological heterostructures exhibit remarkable robustness.
- These findings are comparable to vertically stacked heterostructures.
- This work offers a promising approach for developing planar, high-density non-dissipative devices.
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