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Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

517
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
517
P-N junction01:11

P-N junction

466
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
466
Biasing of P-N Junction01:16

Biasing of P-N Junction

422
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
422
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

215
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
215

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Updated: Jun 5, 2025

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
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Efficient Gate-Tunable Hot-Carrier Photocurrent from Perovskite Multiple Quantum Wells.

Chenhao Wang1, Qi Wei1, Hui Ren1

  • 1Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, Kowloon, China.

Advanced Materials (Deerfield Beach, Fla.)
|December 12, 2024
PubMed
Summary

Researchers achieved efficient hot-hole photocurrent generation using metal-halide perovskite quantum wells and 2D MoS₂ extraction layers. Applying a gate electric field significantly boosted photocurrent efficiency, demonstrating potential for low-power optoelectronics.

Keywords:
2D heterostructureMoS2hot carrier extractionhot carrier photocurrentperovskite multiple Quantum wells

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Hot-carrier relaxation above the bandgap causes significant energy loss in devices.
  • Efficient extraction of hot carriers is crucial for hot-carrier photocurrent generation.
  • Metal-halide perovskites offer potential for hot-carrier applications.

Purpose of the Study:

  • To observe long-lived hot carriers in perovskite multiple quantum wells.
  • To demonstrate effective hot-hole photocurrent generation using 2D MoS₂ as an extraction layer.
  • To investigate the enhancement of photocurrent efficiency via gate electric field application.

Main Methods:

  • Fabrication of (BA)₂(MA)n-1Pb nI 3n+1 (n = 3) perovskite multiple quantum wells.
  • Integration with 2D MoS₂ as a hot-carrier extraction layer.
  • Operando transient reflection measurements and Density Functional Theory (DFT) calculations.

Main Results:

  • Observation of long-lived hot carriers in perovskite quantum wells.
  • Achieved external quantum efficiency (EQE) of up to 35.4% for short-circuit hot-carrier photocurrent.
  • Enhanced EQE to 61.9% with applied gate electric field, alongside improved open-circuit photovoltage.
  • Validated hot-hole extraction through wavelength, carrier density, and gate voltage-dependent measurements.

Conclusions:

  • Perovskite multiple quantum wells are promising for generating long-lived hot carriers.
  • 2D transition metal dichalcogenide semiconductors efficiently extract hot carriers.
  • The developed device architecture holds potential for low-power optoelectronic applications.