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Updated: Jun 5, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Magnetic field dependence of V B- defects in hexagonal boron nitride
Abstract:
The interface with spin defects in hexagonal boron nitride has recently become a promising platform and has shown great potential in a wide range of quantum technologies. Varieties of spin properties of V B- defects in hexagonal boron nitride (hBN) have been researched widely and deeply, like their structure and coherent control. However, little is known about the influence of off-axis magnetic fields on the coherence properties of V B- defects in hBN. Here, by using optically detected magnetic resonance (ODMR) spectroscopy, we systematically investigated the variations in ODMR resonance frequencies under different transverse and longitudinal external magnetic fields. In addition, we measured the ODMR spectra under off-axis magnetic fields of constant strength but various angles and observed that the splitting of the resonance frequencies decreases as the angle increases, aligning with our theoretical calculation based on the Hamiltonian, from which we came up with a solution of detecting the off-axis magnetic field angle. Through Rabi oscillation measurements, we found that the off-axis magnetic field suppresses the spin coherence time. These results are crucial for optimizing V B- defects in hBN, establishing their significance as robust quantum sensors for quantum information processing and magnetic sensing in varied environments.
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