Electron-Beam-Induced Negative Differential Transconductance Homojunction Device Based on van der Waals Materials for...

Area of Science:

• Materials Science
• Nanotechnology
• Semiconductor Physics

Background:

• Negative differential transconductance (NDT) devices are key for multivalued logic, especially ternary computing.
• Current NDT technologies lack a functionally complete set of ternary logic gates, hindering circuit design.
• NDT devices often use complex heterojunctions, impacting fabrication and reliability.

Purpose of the Study:

• To engineer W-shaped current-voltage (I-V) characteristics in tungsten diselenide (WSe2) homojunction NDT devices.
• To demonstrate the creation of a functionally complete set of ternary logic gates for practical ternary computing.
• To showcase electron beam treatment as a versatile tool for tailoring 2D material properties.

Main Methods:

• Utilized electron beam to precisely manipulate Selenium atoms in WSe2, creating lateral homojunctions.
• Developed W-shaped I-V characteristics in WSe2 NDT devices.
• Designed and implemented balanced circuits for ternary NAND, AND, NOR, and OR gates, alongside ternary inverters.

Main Results:

• Achieved W-shaped I-V curves in WSe2 homojunction NDT devices via electron beam treatment.
• Demonstrated the capability for both one-input and two-input ternary logic gates.
• Successfully created a functionally complete set of ternary logic gates, including inverters and two-input gates.

Conclusions:

• Electron beam treatment offers precise control over WSe2 work function for NDT device engineering.
• The developed ternary logic gates form a functionally complete set, addressing a critical gap for ternary computing.
• This work highlights the potential of electron beam lithography for advanced 2D material-based electronic devices.