DC field-biased multibit/analog artificial synapse featuring an additional degree of freedom for performance tuning

Multibit/analog artificial synapses are in demand for neuromorphic computing systems. A problem hindering the utilization of memristive artificial synapses in commercial neuromorphic systems is the rigidity of their functional parameters, plasticity in particular. Here, we report fabricating polycrystalline rutile-based memristive memory segments with Ti/poly-TiO₂/Ti structures featuring multibit/analog storage and the first use of a tunable DC-biasing for synaptic plasticity adjustment from short- to long-term. The unbiased device is of short-term plasticity, positive biasing increases the remanence of the recorded events and the device gains long-term plasticity at a specific biasing level determined from the device geometry. The adjustability of the biasing field provides an additional degree of freedom allowing performance tuning; the paired-pulse facilitation index of the device is tuned by the biasing level adjustment providing further functional versatility. An appropriately biased segment provides more than 10 synaptic weight levels linearly depending on the number and duration of the stimulating spikes. The relationship with spike magnitude is exponential. The experimentally determined nonlinearity coefficient of the biased device for 50 potentiating spikes is comparable to the best published data. The spike-timing-dependent plasticity determined experimentally for the biased device in its long-term plasticity mode fits the mathematical relationship developed for biological synapses. Fabricated on a titanium metal foil, the produced memristors are sturdy and flexible making them suitable for wearable and implantable intelligent electronics. Our findings are anticipated to raise the potential of forming artificial synapses out of polycrystalline metal oxide thin films.