Electrically driven SWCNT for high-efficiency infrared emission based on the electron-phonon scattering effect

High-performance infrared light sources have significantly influenced the fields of photonics and optoelectronics. However, achieving infrared light emission with low energy consumption, high brightness, and rapid response remains a huge challenge. Single-walled carbon nanotubes (SWCNTs) could be an important candidate for infrared light emitters because of their superior electron mobility and phonon transport efficiency. Here, we constructed a freestanding SWCNT emitter integrated into the PCB (printed circuit board) panel. The distinct one-dimensional (1D) subbands of SWCNTs that intersect at the Fermi energy significantly amplify electron-phonon scattering under a bias voltage. This enhancement results in outstanding infrared emission performance even in atmospheric environments. The infrared display device utilizing SWCNTs exhibits high radiation efficiency (P /P ) of 2 × 10^-3 mW. This SWCNT achieves an infrared radiation temperature of up to 468 K at 1.5 V; the response time of the rising edge is 260 ms; and the falling edge is 360 ms, with an energy consumption P of 0.45 W and an optical power P of 9.02 mW. The device demonstrates stable display performance over 10⁴ endurance cycles and can run persistently for more than 14 hours. This high thermal radiation, high-speed response efficiency, and low power consumption infrared emission from SWCNTs highlight their potential for future applications in infrared light sources.