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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
The Ideal Diode01:15

The Ideal Diode

A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Fabrication-aware inverse design with shape optimization for photonic integrated circuits.

Shaheer Raza, Mustafa Hammood, Nicolas A F Jaeger

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    Fabrication-aware inverse design (FAID) improves silicon photonics devices by integrating lithography models. This method reduces performance degradation, leading to lower insertion loss in fabricated devices.

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    Area of Science:

    • Photonics
    • Computational Design
    • Nanofabrication

    Background:

    • Inverse design (ID) in silicon photonics optimizes device geometry but often results in designs sensitive to fabrication imperfections.
    • Process variations during manufacturing, such as those from deep-ultraviolet (DUV) and electron-beam lithography (EBL), significantly degrade device performance.

    Purpose of the Study:

    • To develop a fabrication-aware inverse design (FAID) method that accounts for lithography process variations.
    • To improve the performance and manufacturability of silicon photonic devices designed using inverse design.

    Main Methods:

    • Integrated lithography models for DUV and EBL into the inverse design optimization workflow.
    • Generated and fabricated a Y-branch coupler and a subwavelength grating (SWG)-to-strip converter using the FAID approach.

    Main Results:

    • FAID successfully generated devices that compensate for predicted process bias.
    • Fabricated devices using FAID exhibited up to 0.7 dB lower insertion loss per device compared to conventional ID.

    Conclusions:

    • Fabrication-aware inverse design is a viable strategy to mitigate performance degradation in scalable silicon photonics fabrication.
    • The FAID workflow enables the creation of robust photonic devices that are resilient to manufacturing variations.