Inorganic ligand capped quantum dot light-emitting diodes: status and perspective
Tianxu Zhang1, Xuan Yang1, Bin Xie2
1School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Abstract:
Quantum dots (QDs) have shown great application potential in a variety of optoelectronic devices due to their unique optoelectronic properties, especially playing a key role in the development of quantum dot light-emitting diodes (QLEDs). Inorganic ligands, including metal or non-metal chalcogenides, oxoanions, halides, and metal cations, play crucial roles in the synthesis, stabilization, and functionalization of QDs. Compared to long-chain organic ligands, inorganic ligands are shorter and possess higher electron mobility, which facilitates their application in high-performance QLEDs. This review explores the mechanisms of ligand exchange, classifies the types of inorganic ligands, and discusses their impact on the properties of QDs. Special attention is given to the latest research developments in inorganic ligand QDs for LEDs and their prospective applications in optoelectronics. This review highlights the versatility and efficacy of inorganic ligands, showcasing their potential to revolutionize QLED technology for future high-resolution displays and efficient optoelectronic devices.
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