Buried interface management toward high-performance perovskite solar cells

The interface between the perovskite layer and the electron transport layer is an extremely important factor that cannot be ignored in achieving high-performance perovskite photovoltaic technology. However, the void defects of the interface pose a serious challenge for high performance perovskite solar cells (PSCs). To address this, we report a polydentate ligand reinforced chelating strategy to strengthen the stability of the buried interface by managing interfacial defects and stress. Gelatin-coupled cellulose (GCC) is employed to manipulate the buried interface. The unique functional groups in GCC synergistically passivate the defects from the surface of SnO₂ and the bottom surface of the perovskite layer. Our work demonstrates that by implementing GCC as a buried interface strategy, it is possible to prepare devices with reduced vacancy states, non-radiative recombination suppression, and excellent optoelectronic performance. At the same time, this work improves the efficiency and stability of PSCs and provides greater space for device manufacturing.