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Updated: Jun 4, 2025
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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
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Artificial Control of Giant Converse Magnetoelectric Effect in Spintronic Multiferroic Heterostructure
Takamasa Usami1,2,3, Yuya Sanada2, Shumpei Fujii2
1Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, 560-8531, Japan.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|December 25, 2024
Summary
Researchers developed a new multiferroic heterostructure for spintronics. This structure enables voltage-controlled magnetization switching, paving the way for low-power magnetoresistive random-access-memory (MRAM) technology.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Developing voltage-controlled magnetization switching is crucial for advanced spintronics.
- Existing technologies often require high energy consumption for writing data.
Purpose of the Study:
- To demonstrate a highly (422)-oriented Co2FeSi layer on piezoelectric PMN-PT(011) for spintronics.
- To achieve voltage-controlled magnetization switching with low power consumption.
Main Methods:
- Experimentally fabricating a Co2FeSi/V/PMN-PT(011) multiferroic heterostructure.
- Utilizing an inserted ultra-thin vanadium (V) layer to control magnetic anisotropy.
- Tuning the thicknesses of V and Co2FeSi layers.
Main Results:
- Achieved a highly (422)-oriented Co2FeSi layer on PMN-PT(011).
- Demonstrated artificial control over magnetic anisotropy.
- Observed a giant converse magnetoelectric effect (>10^-5 s m^-1).
- Attained a non-volatile binary state at zero electric field.
Conclusions:
- The Co2FeSi/V/PMN-PT(011) heterostructure enables efficient voltage-controlled magnetization switching.
- This approach offers a pathway towards low-power writing technology for MRAM.
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