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Terahertz Radiation Driven Nonlinear Transport Phenomena in Two-Dimensional Tellurene.
E Mönch1, M D Moldavskaya1, L E Golub1
1Physics Department, University of Regensburg, 93040 Regensburg, Germany.
Nano Letters
|December 25, 2024
Summary
Researchers observed nonlinear electron transport in two-dimensional tellurene using polarized terahertz radiation. This terahertz-driven current, influenced by gate voltage, arises from unique microscopic mechanisms.
Area of Science:
- Condensed matter physics
- Materials science
- Quantum mechanics
Background:
- Nonlinear optical phenomena in 2D materials are crucial for next-generation electronics.
- Terahertz (THz) radiation offers unique ways to probe and control electron dynamics.
Purpose of the Study:
- To investigate nonlinear electron transport in two-dimensional tellurene induced by polarized THz radiation.
- To understand the mechanisms behind THz-driven currents and their dependence on polarization and gate voltage.
Main Methods:
- Experimental study of nonlinear electron transport in tellurene at room temperature.
- Application of polarized THz radiation with varying helicity and polarization orientation.
- Modulation of carrier density using an external gate potential.
Main Results:
- Observation of a direct current quadratic in the THz electric field.
- Identification of current contributions sensitive to radiation helicity and polarization.
- Demonstration of polarization-independent current components.
- Tuning of these contributions by the external gate potential.
Conclusions:
- The observed THz-driven electric current in tellurene originates from the Berry curvature dipole and side-jump mechanisms.
- These findings highlight tellurene as a promising material for THz optoelectronics.
- Gate voltage provides a means to control nonlinear transport phenomena in 2D materials.
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