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Updated: Aug 7, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
Hubert C George1, Mateusz T Mądzik1, Eric M Henry1
1Intel Corporation, Technology Research Group, Hillsboro, Oregon 97124, United States.
Abstract:
Intel's efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes as well as production-level process control. We present key device features and fabrication details as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step toward scaling of extensible 2D qubit array schemes.

