Related Experiment Video
Updated: Jun 4, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
BN-Acene Ladder with Enhanced Charge Transport for Organic Field-Effect Transistors
Chenglong Li1, Yanan Sun2, Ning Xue3
1Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China.
Abstract:
The in-depth research on the charge transport properties of BN-embedded polycyclic aromatic hydrocarbons (BN-PAHs) still lags far behind studies of their emitting properties. Herein, we report the successfully synthesis of novel ladder-type BN-PAHs (BCNL1 and BCNL2) featuring a highly ordered BC3N2 acene unit, achieved via a nitrogen-directed tandem C-H borylation. Single-crystal X-ray diffraction analysis unambiguously revealed their unique and compact herringbone packing structures. Micro-sized single-crystalline organic field-effect transistors (OFETs) demonstrated that an enhanced charge transport capability, with BCNL2 achieving a hole mobility of up to 0.62 cm2 V-1 s-1-three orders of magnitude higher than that of BCNL1 (μh max=6 × 10-4 cm2 V-1 s-1), ranking among the highest values for BN-PAHs-based OFETs. Detailed calculations attribute this significant enhancement in the hole mobility to the marked reduction in reorganization energy (λ) of BCNL2, resulting from the five-membered pyrrole ring annulation and molecular skeleton elongation. This work provides insight into molecular design principles for potential BN-PAHs in optoelectronic applications.
Related Concept Videos
Field Effect Transistor
π Electron Effects on Chemical Shift: Overview
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
P-N junction
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

