Related Experiment Video
Updated: May 8, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line
Donguk Kim1, Dayeon Lee1, Wonjung Kim1
1School of Electrical Engineering, Kookmin University, Seoul, 02707, Republic of Korea.
Abstract:
This study optimizes VT and ΔVT in amorphous indium-gallium-zinc-oxide (a-IGZO) field-effect transistors (FETs) by examining the influence of both channel length (L) and Ga composition. It was observed that as the ratio of In: Ga: Zn changed from 1:1:1 to 0.307:0.39:0.303 in the IGZO film, both VT and ΔVT decreased by 0.1 V at the shortest channel length (L = 0.5 μm). This reduction was attributed to the change in the oxygen concentration in IGZO due to the variation in Ga composition. In addition, as the channel length decreased from 10 μm to 0.5 μm, VT decreased by up to 0.7 V, and ΔVT decreased by up to 0.4 V. This observation was due to diffusion of oxygen vacancies (VO) from the source and drain into the main channel. To provide a comprehensive understanding, we quantitatively modeled the doping concentration of IGZO and the trap density of gate insulator (GI) traps using TCAD simulation based on Ga composition and diffusion of VO. Using this approach, we propose a method to optimize the design of a-IGZO FETs with high VT and low ΔVT in short-channel devices by adjusting the Ga composition.
More Related Videos
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Small-Signal Analysis of MOSFET Amplifiers

