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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium-Zirconium Oxide
Seung-Mo Kim1, Minjae Kim1, Chan Bin Lee1
1Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.
Abstract:
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure. The leakage current density (Jg = 4.6 × 10-5 A/cm2 at +0.8 V) was four times lower compared to the reference group treated with an optimized RTA process. The outstanding electrical characteristics of the 6 nm HZO film were attributed to the stable formation of the morphotropic phase boundary (MPB) structure, which was enabled by the directional scanning nature of the CW-LSA process.
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