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Percolation theory-based KMC simulation for scaled Fe-FET based multi-bit computing-in-memory with temperature

Qingxiao Zhu^1,2, Lihua Xu^1,2, Zhidao Zhou^1,2

¹State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, People's Republic of China.

|January 2, 2025

Summary

This summary is machine-generated.

This study explores how percolation transport affects ferroelectric field-effect transistor (FeFET) multi-value storage. Decreasing aspect ratio improves FeFET polarization, reducing device variations and enhancing state separation for reliable computing.

Keywords:

FeFET device-to-device variation multilevel cell (MLC)percolation

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Area of Science:

Materials Science
Electrical Engineering
Computational Physics

Background:

Ferroelectric field-effect transistors (FeFETs) are promising for multi-value storage.
Percolation transport mechanisms significantly influence FeFET performance.
Device-to-device variations and state overlapping are critical challenges for multi-bit applications.

Purpose of the Study:

To investigate the impact of percolation transport on FeFET multi-value storage.
To analyze the influence of aspect ratio and temperature on FeFET characteristics.
To propose solutions for reliability issues in FeFET-based in-memory computing.

Main Methods:

Kinetic Monte-Carlo (KMC) simulations were employed to model percolation transport.
Aspect ratio and temperature dependencies were systematically studied.
High-temperature characterization was used to analyze amorphous channel disorder effects.

Main Results:

Decreasing device aspect ratio enhances ferroelectric polarization, mitigating variations and improving state separation.
Amorphous channel disorder, coupled with multi-domain dynamics, influences percolation transport.
KMC simulations predicted multi-value distributions from 300 K to 400 K.

Conclusions:

Percolation transport plays a crucial role in FeFET multi-value storage reliability.
Device design (aspect ratio) and material properties (channel disorder) impact performance.
An efficient write-verify scheme can mitigate state overlapping for improved multi-bit computing.